SILICON WAFER SUPPLIER
A division of Y Mart, Inc.
10883 McHarg Court, Parker, CO 80134
(561) 602-0865 | email@example.com
Silicon wafers are used as a substrate material in a wide range of applications including but not limited to aerospace, military, sensors, LED nano devices, space industry, medical field, and automotive industry. As a worldwide silicon wafer supplier, Alsil Material offers only top-quality silicon wafers made to your exact specifications.
Our company has been around since 1995. We started out producing silicon wafers (deleted product) for laboratories and universities, but we’ve since expanded to meet the demand of the semiconductor industry.
Our goal is to supply excellent quality silicon wafers while keep cost down.
We particularly customize our silicon substrates to your exact needs. Choose us when you need sapphire, silicon, silicon carbide, and gallium arsenide.
To buy silicon wafers from one of the top silicon wafer producers in the country, read below to see what we can offer, and contact us today. Please call at (561) 602-0865 if you have questions, fill out our online form or email us directly at firstname.lastname@example.org.
CZ grown - Diameter 2" up to 12". We make them to customer specifications
- Special request materials: example, non-standard diameter, thickness, orientation
FZ grown - Diameter 2" up to 8". We make them to customer specifications
- Special request materials: example, non-standard diameter, thickness, orientation including but not limited to diameter: 29mm and 45mm
Diameter 3" to 8"
Epi Thickness: 0.1um to 150um
Epi Resistivity: 0.01 to 1000 Ohmcm
Layer Uniformity: <2% for <20um and <4% for >20um
Surface Defects: <20 @ 0.2um LSE
Dopant Source: Boron, Phosphorous, or Arsenic
We also make special request Epi silicon wafers to customer needs
LiNbO3 Crystal has unique electro-optical, piezoelectric, photoelastic and nonlinear optical properties. ... It is an excellent material for manufacture of optical waveguides, etc. LiNbO3 wafer is indexed as X cut, Y cut or Z cut with trigonal structure, it also can be indexed with hexagonal structure.
Thin Device Layer - Diameter 8" and 12" with device layer <1.5um, BOX <3um
Thick Device Layer - Diameter 4" to 6" with device layer 2um up to >50um or to customer specification
- BOX 0.5 to 2.4um,TTV <1um
Diameter 4". We make them to customer specifications
Diameter 2" to 4". We make them to customer specifications
GaAs, GaN, InP, GaP, GaSb, InAs, InSb
We make to customer specifications